Combining indentation testing with high-resolution imaging enables accurate detection of critical delamination loads.
The adhesion of dielectric thin films has presented a major obstacle for interconnect integration and dependability, with issues such as film adhesion failures, reduced dielectric film mechanical integrity, and multi-layer interfacial cracking compromising device performance.
Underlying patterns and crystallographic structural mismatches drive debonding and delamination mechanisms, leading to dielectric layer failure.
Understanding these processes in interconnect structures is essential for enhancing production processes and improving interconnect reliability.
Nanoindentation is typically used to measure thin film mechanical characteristics, including elastic modulus and hardness.
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Author's summary: Film adhesion failures impact device performance.